Engine pressura sensorem 2Cp3-68 (CXCIV) DCCXXV for Carter CAVATOR

A modum ad parat pressura sensorem, propria ex complectendis sequentibus gradibus:

S1, providente laganum a tergo superficiem et frontem; Formatam piezoresistive habena et graviter doped contactu area onthe fronte superficiem lagae; Formatam pressura altum cavum etching tergo superficiem lagae;

S2, vinculum firmamentum sheet in tergo laganum;

S3, vestibulum plumbum foramina et metallum fila in fronte latere lagae et connectens piezoresistive literature formare wheatstone pontem;

S4, depositing et formatam passio layer in fronte superficiem lagae et ostium partem passio accumsan formare metallum codex area. II. Et vestibulum modum pressura sensorem secundum petitionem I, in quibus S1 specie complectitur sequenti gradibus: S11: providing a laganum cum retro superficiem et a fronte superficiem et definiens crassitudine et a pressura et a conspectu meo et definiendis a crassitudine et a sensitivo et in latam in crassitudine et a pressura et a malleo S12: Ion implantatio adhibetur in fronte superficies in laganum, piezoresistive literature fabricari a summus temperatus diffusione processus et contactus regiones sunt graviter doped; S13 depositing et formando tutela iacuit superficiem laganum; S14: Etching et formatam a pressura altum cavum in tergo de laganum ad formare a pressure sensitivo film. III. Et vestibulum modum pressionis sensorem secundum dicendum I, in quibus laganum est Soi.

In MCMLXII, Tufte et al. Premela pressura in Piezoresistive sensorem cum Silicon Piizoresistive Silicon et Silicon film structuram ad primum, et coepit investigationis in piezoreistive pressura sensorem. In the late 1960s and early 1970s, the appearance of three technologies, namely, silicon anisotropic etching technology, ion implantation technology and anodic bonding technology, brought great changes to the pressure sensor, which played an important role in improving the performance of the pressure sensor. Since 1980s, with the further development of micromachining technology, such as anisotropic etching, lithography, diffusion doping, ion implantation, bonding and coating, the size of pressure sensor has been continuously reduced, the sensitivity has been improved, and the output is high and the performance is excellent. In eodem tempore, in progressionem et applicationem novae micromachining technology facere in film crassitudine pressura sensorem verius regi.